MICROELECTRONIC TECHNOLOGY

    Introductionon the properties of semiconductor materials. Doping of the semiconductormaterials. Diffusion mechanisms of dopant impurities. Implantation technique.Rapid thermal annealings.
Short accounts on the properties of the p/n junction and ofsemiconductor surfaces. Metal/semiconductor contacts. Ohmic and rectifyingcontacts. Resistivity and mobility measurement techniques.
 
   Growth of bulksingle crystal by Czochralski method. Visit to the bulk growth laboratory(IMEM-Institute).
Epitaxial growth techniques: Vapour Phase Epitaxy (VPE, MOVPE),Molecular Beam Epitaxy (MBE). Visit to the epitaxial growth laboratories(IMEM-Institute).
   Opticallithography. Lithographic processes (resist deposition, exposure,developement). X-ray and Electronic Beam lithography.
Process steps for preparation of metal/semiconductor diodes andp/n junctions. Oxidation processes.
   Realization(through evaporations and photolithography) of Schottky barriers on GaAs andSi, control of the ohmic contact quality and measurements of thecurrent-voltage characteristics (IMEM-Institute, Electrical measurementlaboratory).
   Wet and dry etchings. Plasmaetching, sputter etching and reactive ion etching. Etching tests onsemiconductor materials (IMEM-Institute, photolithography laboratory).Realization of a p/n junction with “mesa” structure.
   Metal deposition by thermal andelectron beam evaporation. (IMEM-Institute, photolithography laboratory).
Capacitance vsvoltage measurements of Schottky barriers and p/n junctions.