TECHNOLOGIES OF MATERIAL GROWTH
Learning outcomes of the course unit
The course is meant to give an introduction to the various technologies for growing single crystals of electronic materials
Acquaintance with physico-chemical and physical aspects as relevant to materials technology
Course contents summary
Phenomenological and atomistic aspects in materials crystallization.
Growth stability and the concept of epitaxy. The crystal growth technology
of electronic materials: principal techniques (overview). Growth techniques
of bulk crystals.
Structural defects: their formation, detection, control and reduction in
crystal growth processes. After-growth processing: wafers preparation
(cutting, lapping, polishing, crystallographic orientation with particular
reference to silicon).
Growth technology of epitaxial structures: brief description of LPE,
PVD, CVD, MOCVD, MBE.
Mathematical modelling of crystal growth processing (brief outline).
Silicon planar technology: oxidation, solid-state diffusion, ion
implantation, metallizations, lithographic systems (brief outline).
Examples of applications.
Lecture notes. As to suggested further reading:
1) A.A.Chernov ed., Modern Crystallography III: Crystal Growth, Springer, Berlin, 1984 (selected chapters); 2) J.C.Brice, Crystal Growth Processes, Blackie -Halstead Press, Glasgow, 1986 (selected chapters)
Oral lectures and oral examinations