Learning outcomes of the course unit
The course is meant to give information on aspects of solid-state physics and crystallography especially relevant to the technology of applied (mainly electronic) materials
Triennial degree in physics and/or triennial degree in science and technology of materials
Course contents summary
Statistical thermodynamics: brief summary of main points. Point defects in
crystals: their disorder and disorder stability; their relevance in
crystal properties and solid-state diffusion. Extended defects: line
defects (dislocations), surface and volume defects; their incidence on
physical properties). Formation, control and reduction of extended defects
in crystallization processes (structural stability). Thermoelasticity and
extended defects (brief outline).
Phenomenological approach to crystal surfaces and "fluid/crystal"
interfaces. Surface energy and its effects on phase equilibria:
Gibbs-Thomson and Ostwald relationships as relevant to
micro-precipitation. Equilibrium forms of crystals (Wulff's theorem).
Solid-state transitions and sinterization.
Atomistic approach to crystal surfaces and interfaces. Jackson's and
Temkin's models: compact (flat, rough) and diffuse interfaces.
Crystallographic approach to crystal surfaces: Hartman-Perdok(PBC) theory.
Crystal growth mechanisms: normal growth (Wilson-Frenkel); lateral growth
(BCF); bidimensional-nucleation growth.
Epitaxy: general notion and overview of growth techniques (LPE, PVD, CVD,
Lecture notes. As to further suggested reading:
1) R.A.Swalin, Thermodynamics of solids, Wiley, New York,1962 (selected
2) P.Hartman ed., Crystal Growth: an Introduction, North-Holland,
Amsterdam, 1973 (selected chapters);
3) J.C.Brice, Crystal Growth Processes, Blackie-Halstead Press, Glasgow,
1986 (selected chapters)
oral lectures and oral examinations