Learning outcomes of the course unit
Basic knoweledge of the main tecniques and processes used in thepreparation of microelectronic devices
Knowledge of thefundamental properties of semiconductor materials
Course contents summary
Introductionon the properties of semiconductor materials. Doping of the semiconductormaterials. Diffusion mechanisms of dopant impurities. Implantation technique.Rapid thermal annealings.
Short accounts on the properties of the p/n junction and ofsemiconductor surfaces. Metal/semiconductor contacts. Ohmic and rectifyingcontacts. Resistivity and mobility measurement techniques.
Growth of bulksingle crystal by Czochralski method. Visit to the bulk growth laboratory(IMEM-Institute).
Epitaxial growth techniques: Vapour Phase Epitaxy (VPE, MOVPE),Molecular Beam Epitaxy (MBE). Visit to the epitaxial growth laboratories(IMEM-Institute).
Opticallithography. Lithographic processes (resist deposition, exposure,developement). X-ray and Electronic Beam lithography.
Process steps for preparation of metal/semiconductor diodes andp/n junctions. Oxidation processes.
Realization(through evaporations and photolithography) of Schottky barriers on GaAs andSi, control of the ohmic contact quality and measurements of thecurrent-voltage characteristics (IMEM-Institute, Electrical measurementlaboratory).
Wet and dry etchings. Plasmaetching, sputter etching and reactive ion etching. Etching tests onsemiconductor materials (IMEM-Institute, photolithography laboratory).Realization of a p/n junction with “mesa” structure.
Metal deposition by thermal andelectron beam evaporation. (IMEM-Institute, photolithography laboratory).
Capacitance vsvoltage measurements of Schottky barriers and p/n junctions.
G. Soncini,“Tecnologie microelettroniche”, Boringhieri
CRM Grovenor,“Microelectronic materials”, Adam Hiler
P. Blood and WOrton, “The electrical characterization of semiconductor: majority vcarriersand electron states, Academic Press 1992
Oral lesson and laboratory